Abstract
Shallow p+/njunctions were formed using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nanosecondnon-melt excimer laser annealingandrapidthermal annealing. The effect of laser pulse number on dopant activation and regrowth of a-Si layer are discussed.We found that laser annealing aloneis insufficient to regrow a-Si layer and activate dopant. In contrast, activationwas observed in the samples that were subjected to preannealingrapid thermal annealing followed by non-melt laser annealing; with slight increase of sheet resistance valuewhen the number of laser pulse shot was increased. This is considered due to the interaction of dopant and supersaturated defect in the remaining a-Si layer.The percentage of defect-dopant interaction increased with the pulse shot numbers which contributed to the decrease in activation level.
Highlights
The realization ofefficientand lower energy-consuming devices has been relied on the continuousdownscaling of silicon (Si)-MOS transistor dimensions
This paper reports the formation of shallow p+/njunctions using germanium pre-amorphization (Ge-PAI) and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nanosecondNLA andrapidthermal annealing (RTA)
Stable Hall measurement could be performed in these samples implying that the regrowth of a-Si layer had begun and that boron was activated during annealing
Summary
The realization ofefficientand lower energy-consuming devices has been relied on the continuousdownscaling of silicon (Si)-MOS transistor dimensions. Low-energy boron-ion implantation can be performed with high dose concentration to obtain highly doped of boron near surface [5,6,7,8]. This paper reports the formation of shallow p+/njunctions using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nanosecondNLA andrapidthermal annealing (RTA).
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