Abstract
The Ni(Pt)Si1-xGex films with 5 at.% Platinum (Pt) were prepared using a two-step annealing scheme. The variation of the Rsh with the Rapid Thermal Annealing (RTA) temperature determined the optimal silicidation process with RTA1 treatment at 300 oC/60s and RTA2 treatment at 400 oC/30s. A physical model of Pt diffusion during the silicidation process was proposed to illustrate the Pt redistribution phenomenon. By using X-ray diffraction (XRD), transmittance electron microscope (TEM), energy dispersive X-ray (EDX) element mapping and line-scanning, the phase composition, morphology and the element distribution of as-formed films were analyzed.
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