Abstract
A copper-doped silica (Cu-SiO2) film of 50 nm thickness was prepared by cosputter deposition of Cu and SiO2 targets. A metal–oxide–metal (MOM) cell comprising a Cu-SiO2 layer sandwiched between a Cu top electrode and a Pt or Al bottom electrode was utilized to characterize resistive switching behavior. Both cells exhibited bipolar switching behavior. Electric conduction of the cell in the high-resistance state prepared using the Pt bottom electrode followed the space-charge-limited-current mechanism, whereas the cell prepared using the Al bottom electrode exhibited Schottky emission. An intermediate oxide layer was observed and attributed to the Schottky emission in the cell prepared using Al bottom electrode.
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