Abstract
On the basis of the proximity gettering of platinum by vacancy defects which are induced by proton irradiation, local platinum doping is realized. This method is used as a local lifetime control technology for high-power diodes. The theoretical dependence of electrically active Pt concentration CPtS on the concentration of irradiation-induced defects CV, is also studied. The diodes' reverse performance parameters are measured. At low proton irradiation doses, the quantities of platinum gettered by irradiation-induced defects are enhanced when the irradiation dose increases. This can improve the device's performance. When the proton irradiation dose is high enough, the peak concentration of gettered platinum tends to saturate. This is consistent with the theoretical result.
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