Abstract
High-resolution photoinduced transient spectroscopy (HRPITS) has been used to investigate defect centres in n-type epitaxial silicon after 24 GeV/ c proton irradiation with fluences of 3×10 14 and 9×10 14 cm −2 followed by a long-term annealing at 80 oC. The measurements revealed nine traps with activation energies ranging from 5 to 460 meV. In the material irradiated with the lower fluence the concentration of V 2O −/0 complexes is found to be approximately 4 times lower than that of divacancies V 2 −/0. After the irradiation with the higher fluence the material defect structure is different and the concentration of V 2O −/0 complexes is around 6 times higher compared to that of divacancies V 2 −/0.
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