Abstract
To demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystalline quality of the 3C-SiC films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 950 °C. The crystalline quality has been investigated by transmission electron microscope and X-ray diffraction. 3C-SiC is epitaxially grown on Si(111) and the 3C-SiC films are in either near single crystalline or highly oriented form with stacking faults and twin. It is expected that the film with good crystalline quality may grow at around 2.5 in the ratio of the flow rate of C3H8 to SiH4 and any microstructures of 3C-SiC films on Si (111) can be controlled by accurately controlling the ratio of C/Si.
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