Effect of process parameter variation on f t in n-type junctionless FETs

Abstract

In this paper we have studied the effect of fin width (W), fin height (H), gate oxide thickness (T ox), gate length (L g) and doping (N d) values variations on unity gain cut-off frequency (f t) in Junctionless FET by performing extensive Technology CAD (TCAD) simulations. The parasitic series resistance decreases as fin width, fin height and doping increases while the total input capacitance (C gg) increases. Except the higher T ox with elevated doping values, the device is in g m dominated region resulting in increased f t as fin width, fin height and doping values increase.