Effect of pressure, temperature, and magnetic field on the binding energy of the electron-hole system in III-V group semiconductors

Abstract

In this study, ground state binding energy of heavy hole magneto exciton in GaAs/In0.47Ga 0.53As cylindrical quantum well wires (CQWWs) were calculated using variational technique depending on wire size and external parameters. We can briefly state the change of binding energy with hydrostatic pressure, temperature, wire radius and external magnetic field strength as follows. With increasing temperature for constant pressure and magnetic field, the exciton binding energy decreases slightly. On the other hand, increasing magnetic field strength and pressure increase the binding energy as the particle's quantum confinement effects increase. To interpret these results, we examined pressure and temperature changes of barrier heights, effective masses, wire radius, dielectric constant, and band offsets. Conduction and valence band offset increase by 37% with pressure, while band offsets decrease by -1.55% with temperature. These differences in values are directly due to the difference in pressure and temperature coefficients of the prohibited band gaps of GalnAs and InAs. These variations in binding energy, as well as in electron and hole energies, depending on structure parameters and external parameters provide a prediction to produce adjustable semiconductor devices.