Abstract
The hydrostatic pressure dependence of the solid phase epitaxial growth rate of 〈100〉 Si into ion implanted amorphous Si at 500 °C has been monitored by Rutherford backscattering and channeling techniques. The growth rate increases with pressure so that at 20 kbar it is 14 times the ambient value. The increase is described by an activation volume for the process of −8.7 cm3/mole.
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