Abstract
Measurements of magnetoresistance and Hall emf have been carried out on GaSb/InAs/GaSb quantum wells of different thickness and with interfaces of different types in fields up to 7 T and at pressures up to 2.5 GPa at 4.2 K. The pressure dependence of the electron and hole concentrations was derived by analysis of Shubnikov-de Haas oscillations and magnetoresistance tensor components, made in terms of the classical model operating with carriers of two types. It is shown that pressure initiates a transition from semimetallic to semiconducting regime.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
