Abstract
It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300° C, modifies the structure of oxide near the surface.
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