Abstract
Atmosphere pressure chemical vapor deposition (CVD) is one of the most powerful methods of synthesizing high quality and large area MoS2 films with a reasonable cost. In our work, the large-scale and high crystalline quality monolayer MoS2 nanosheets were synthesized on Silicon substrate with a 300 nm oxide layer using MoO3 and S powders as precursors by an atmosphere pressure CVD. The results suggest that the surface morphology, crystalline quality and luminescence of CVD-grown MoS2 nanosheets can be tunable by controlling the precursor ratio (the effective Mo: S ratio). Excessive S-rich atmosphere is favor to synthesize large-size and high crystalline quality monolayer MoS2 nanosheets with sharp corners and straight edges. This study may provide insight into the synthesis of large-scale and high crystalline quality MoS2 films.
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