Abstract
Atomically-thin hexagonal boron nitride (h-BN) layers are attractive two-dimensional dielectric material for nanoelectronic devices. However, it has been a challenge to reproducibly synthesize continuous and high quality single layer h-BN. Herein, we report the effect of precursor flow rate and impurities on the synthesis of h-BN layers using a chemical vapor deposition (CVD) method. It was shown that the initial flow rate of precursor significantly impacts the nucleation density. In addition, even minute amount of carbon impurities could significantly degrade the quality of the product.
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