Effect of pre-annealing of Mo foil substrate on CZTSSe thin films and Mo(S,Se)2 interface layer

Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) thin film deposited on flexible Mo foil substrate has advantage of high mass specific power and good ductility. However, a thick Mo(S,Se)2 interface layer is easily to be formed between CZTSSe and Mo foil substrate. The ohmic contact property of CZTSSe/Mo is deteriorated by the formation of Mo(S,Se)2. In this work, the Mo foil substrate was pre-annealed to inhibit the growth of Mo(S,Se)2 interface layer. CZTSSe thin films were prepared on the pre-annealed Mo foil substrate by sol-gel and selenization methods. The pre-annealing treatment of Mo foil substrate leads to the oxidation of Mo. During the high temperature selenization process, the MoOx acts as a buffer layer to suppress the formation of the Mo(S,Se)2 interface layer. With the increase of the pre-annealing temperature of the Mo foil substrate, the thickness of the Mo(S,Se)2 interface layer decreases, and the resistance of CZTSSe/Mo(S,Se)2/Mo structure decreases. The ohmic contact properties of CZTSSe/Mo can be improved by the pre-annealing treatment of metal Mo foil substrates.