Abstract
We investigated the effect of C49-to-C54 conversion behavior on the agglomeration of Ti-silicide fabricated on subquarter micron polycrystalline Si lines by comparing pre-amorphized samples with conventional ones. Pre-amorphization of polycrystalline Si enhances the C49-to-C54 transformation on subquarter micron linewidths, however, it results in the early development of macroscopic grooves during the second rapid thermal annealing. From these results, we suggest the existence of an extra thermal budget during the second rapid thermal annealing of the pre-amorphized samples, which deteriorates the thermal stability of the C54-TiSi2 featured line. It is also shown that C49-to-C54 transformation on a 0.2 μm linewidth in the conventional samples has two kinds of competing factors when postannealing is added. One is the tendency of C54 transformation and the other is agglomeration of C49-TiSi2 grains. During high temperature annealing (>850 °C), C49-TiSi2 has been agglomerated by a thinning mechanism instead of transformation into the C54 phase.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
