Abstract
Copper nitride thin films were deposited on glass substrates by reactive DC (direct current) magnetron sputtering with 0.8Pa N<sub>2</sub>-gas partial pressure (the total pressure was 1Pa), 100°C substrate temperature and different DC powers. X-ray diffraction measurements show that the films are composed of Cu<sub>3</sub>N crystallites with anti-ReO<sub>3</sub> structure and exhibit preferential orientation to the [111] direction. The intensity of the preferred crystalline orientation of the films increased with DC power. It is found that the DC power not only affects the crystal structure of the Cu<sub>3</sub>N films but also affects its resistivity. The resistivity of Cu<sub>3</sub>N films decreased sharply with increasing of the DC power, reaching a value 1.33Ωcm. From this work, it is concluded that the optimum DC sputtering power for producing high-quality and well [111]-oriented Cu<sub>3</sub>N films on glass substrates is 80W, with 0.8Pa N<sub>2</sub>-gas partial pressure and 100<sup>0</sup>C substrate temperature.
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