Abstract
The effect of power modulation oil radical concentration and uniformity in a single-wafer plasma reactor was investigated with a radical transport and reaction model. Plasma etching of silicon using tetrafluoromethane under relatively high pressure (≈l torr) high frequency (13.56 MHz) conditions was taken as an example system. Gas velocity, temperature, and radical concentration profiles were obtained numerically by a finite element method. When compared to a contin uous wave plasma, power modulation can alter the relative concentration of radicals and in turn the each rate and uniformity as well as selectivity and anisotropy Uniformity is improved by power modulation except at high flow rates which, however, result in poor utilization of the feedstock gas.
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