Abstract
Studies of stimulated THz emission from boron-doped Si/Si1−xGex/n-Si quantum-well (QW) structures of various potential and doping profiles are presented. In the single-QW structures with the optical resonator, the stimulated THz emission is observed only for Ge content x=0.07, 0.1, and 0.15. Two different regimes for excitation of the emission are observed in the same sample depending on charging the surface and thermal ionization of donors in the substrate.
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