Abstract
In this study, we investigated the effect of the post-etch cleaning of GaAs surfaces. We found that a plasma damage layer was formed on GaAs surfaces by dry etching, and an As-rich layer remained after post-etch cleaning. The As rich layer needs to be removed because it is replaced by micron-sized particles when stored in an air. We also found that a pure GaAs surface can be obtained by performing additional cleaning consisting of oxide formation and removal.
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