Abstract
Thin films of cadmium zinc oxide (CdZnO) were deposited on glass substrates by reactive dc magnetron sputtering and post sputter annealed at different temperatures: 350 °C, 400 °C, 450 °C, 500 °C and 550 °C. These films were characterized by glancing angle x-ray diffraction, field emission scanning electron microscopy, photoluminescence, UV–vis–NIR spectroscopy and Hall measurements. The structural results revealed that all these films exhibit hexagonal wurtzite structure with complete c-axis orientation in (002) plane. The transmittance of these films increased with the post sputter annealing treatment and minimum band gap observed for the film that was annealed at 500 °C. The carrier concentration and Hall mobility increased with post sputter annealing, while electrical resistivity decreased with the narrowing optical band gap and increase in the crystallite sizes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
