Abstract
Highly C-axis oriented ZnO films were deposited by RF magnetron sputtering technique on unheated Si substrate with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer deposited using thermal oxidation. We employ thermal annealing techniques with temperature range from 350degC to 800degC to investigate quality of annealed ZnO substrates. Post deposition annealing of ZnO films at atmospheric pressure in oxygen at different temperatures were found to improve film structure such as dense structure, smooth surface, and increasing resistivity. The surface morphology dramatically changes to be smooth surfaces with increase in annealing temperature. The correlation between annealing conditions and the physical structure of the films e.g. crystalline structure and microstructure was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The preferred annealing condition has been found to improve ZnO film characteristics for piezoelectric applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
