Abstract
In this work, a detailed study of the effect of thermal treatment (hot plate) on a Mo/CZTS/CdS/i-ZnO/ITO solar cell was carried out, which promotes the diffusion of the Cd contained in the window layer of CdS towards the absorber layer of CZTS. The thermal treatment of the Mo/CZTS/CdS/i-ZnO/ITO solar cell was carried out at temperatures ranging from 100 °C to 400 °C and times varying from 3 to 15 min in air atmosphere. The CZTS was grown from deposits of metallic precursors (Cu/Sn/Cu/Zn) by sputtering and annealing at two ramps: 200° C for 45 min with an argon flow of 1 mbar and 550 °C for 5 min at 1 bar in an atmosphere of S + Sn. For the complete solar cells with a hotplate treatment of 280 °C for 6 min an increase of 2.7% to 5.2% of conversion efficiency was observed compared to the solar cell without hotplate treatment. The band gap CZTS decreased from 1.56 to 1.43 eV and Jsc increased from 12.0 mA/cm2 to 15.4 mA/cm2.
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