Abstract
We report the effect of annealing temperature on structural, electrical and optical properties of polycrystalline zinc oxide thin films grown on p-type silicon (100) and glass substrates by vacuum coating technique. The XRD and AFM measurements confirmed that the thin films grown by this technique have good crystalline hexagonal wurtzite structures and homogenous surfaces. The study also reveals that the rms value of thin film roughness increases from 6 to 16 nm, the optical band gap increases from 3.05 to 3.26 eV and resistivity from 0.3 to 5 Ωcm when the post-deposition annealing temperature is changed from 400 to 600 °C. It is observed that ZnO thin film annealed at 600 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
