Abstract
The effect of He/H 2 downstream plasma on chemical vapor deposition (CVD) low-k films with different porosities was studied. The results show that this plasma does not reduce the concentration of Si―CH 3 bonds in the low-k matrix and that the films remain hydrophobic. However, mass loss and reduction in bulk C concentration were observed. The latter phenomena are related to the removal of porogen residue formed during the UV curing of the low-k films. It is demonstrated that the porogen residue removal changes the films' porosity and mechanical properties. The depth of the modification is limited by the penetration of H radicals into the porous low-k films.
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