Abstract
Pristine and Pt-doped CuO nano-flowers were synthesized by a simple water bath heating method in this paper. Highly sensitive hydrogen sulfide (H2S) gas sensors based on Pt-doped CuO nano-flowers were fabricated. Scanning electron microscopy, X-ray diffraction, inductively coupled plasma atomic emission spectrometry, and energy dispersive X-ray spectroscopy were used to examine the characteristics and morphology of materials. The sensing performances of sensors with different concentrations of Pt dopants were evaluated at different operating temperatures. The results indicated that the CuO sensor doped with 1.25 wt % Pt exhibited the highest response (Rg/Ra, where Rg is the resistance in gas, and Ra is the resistance in air) of 135.1 to 10 ppm H2S at 40 ∘C, which was 13.1 times higher than the response of a pure CuO sensor. Pt doping also plays an important role for the enhancement of H2S selectivity against C2H5OH, NH3, H2, CH3COCH3, and NO2.
Highlights
Hydrogen sulfide (H2 S) is a toxic, harmful, and malodorous gas, which is usually produced by petroleum refining, as well as agricultural and biogas production [1,2,3]
Long recovery time is a common issue for the metal oxide semiconductor sensors at low operating temperature [27], and we found that applying a short electric current pulse is an appropriate way to reduce the recovery time
We proposed a solution to solve the problem that the gas sensors could not be completely recovered at a low operating temperature
Summary
Hydrogen sulfide (H2 S) is a toxic, harmful, and malodorous gas, which is usually produced by petroleum refining, as well as agricultural and biogas production [1,2,3]. Among the various detection methods, metal oxide semiconductor gas sensors have been widely used in the detecting of toxic, flammable, and explosive gases; monitoring air quality; and food processing, due to their simplicity, high sensitivity, low cost, and compatibility with modern electronic devices [8,9]. Reported H2 S gas sensors based on CuO thin films, and the results showed that the response of CuO thin films to sub-ppm (100–400 ppb) H2 S at room temperature was highly reversible. There is still a great demand to develop a H2 S gas sensor with excellent sensing performance, such as fast response/recovery time, good selectivity, high sensitivity, low detection limit, and relatively low operating temperature [24]. The effect of Pt doping plays an important role in enhancing the sensing performance, and the resulting gas sensors are able to operate at a low temperature. Long recovery time is a common issue for the metal oxide semiconductor sensors at low operating temperature [27], and we found that applying a short electric current pulse is an appropriate way to reduce the recovery time
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