Abstract
Abstract A study is reported of the effect of the plasma gas pressure P on the hydrogen content, type of the S-H bonding, photoluminescence, optical gap, and electronic transport properties of plasma-deposited hydrogenated amorphous silicon. An important result is the observation that samples prepared at P > P 0, where P 0 is the pressure of the Paschen curve minimum, contain silicon dihydride and have a kink in the conductivity curve near 410 K, whereas samples prepared at P < P 0 do not. A tentative explanation of this effect is given.
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