Abstract
The technique of pre-oxidation of the bottom CoFe electrode prior to deposition of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> was previously shown to be capable of suppressing intermixing at the ferromagnet/Al interface and removing partial shorts near Al grain boundaries. In this paper, we studied the influence of the plasma oxidation on the pre-oxidized magnetic tunnel junctions (MTJs). In general, the tunneling magnetoresistance (TMR) is independent of the plasma oxidation time whereas the resistance-area product (RA) increases with it. However, for the pre-oxidized MTJs with very thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (Al thickness < 0.7 nm prior to plasma oxidation), the TMR decreases with plasma oxidation while the RA increases with it.
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