Abstract
Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by pulse-modulated rf plasma deposition under the conditions of a constant peak-to-peak rf voltage, a constant plasma-on-time and various plasma-off-times. The infrared absorption spectra showed that the peak of C–Hn wagging mode had the highest intensity, except for that of Si–Hn wagging mode, although for a-Si1-xCx:H films prepared using a continuous wave plasma this peak is scarcely observed or very small and is always smaller than that of Si–CH3 wagging mode. The carbon content increased with increasing the plasma off time, indicating that the intake of carbon atoms occurred mainly during the plasma off time. The photoconductivity and photosensitivity slightly increased with increasing the plasma off time although the carbon content also increased.
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