Abstract
The electrical properties of lateral geometry GaN Schottky rectifiers were measured before and after deposition of SiN x passivation layers by conventional capacitively coupled plasma enhanced chemical vapor deposition. The rectifiers showed changes in reverse breakdown voltages and higher forward leakage currents for all plasma deposition conditions. The change in rectifier performance was found to depend on plasma exposure time, incident ion energy, atomic hydrogen neutral flux and film stress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
