Abstract
Abstract A lot of theoretical and experimental work (Landau, 1937; Wilson, 1941; Hendricks and Teller, 1942; Jagodzinski, 1949a–c; Kakinoki and Komura, 1952, 1954; Gevers, 1952, 1954a,b; Warren, 1959; Alegra, 1964) has demonstrated that planar defects, stacking faults, twin boundaries, antiphase boundaries, etc., influence both the location and profiles of diffraction peaks. It is important to take the potential planar defects in a crystal into account in cases when the intensity distribution in a peak is utilized for determination of other real crystal characteristics [size of coherent scattering units (crystallites), stress value in a crystal, lattice period, atom locations, etc.].
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