Abstract
The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires.
Highlights
Wide-bandgap semiconductor materials are one of the leading contenders for powered electronic devices, light-emitting diodes, transducers, and high-electron-mobility transistors
The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and excellent electron emission characteristics can be achieved in the pulse-voltage driving mode, including lower turn-on voltage and higher maximum current
The results indicate that the pulsed driving mode has a much higher emission current than the DC driving mode for the Silicon carbide (SiC) nanowire, both in the region of low voltage and high voltage
Summary
Wide-bandgap semiconductor materials are one of the leading contenders for powered electronic devices, light-emitting diodes, transducers, and high-electron-mobility transistors. Owing to the poor conductivity caused by the large bandgap in intrinsic SiC nanowires, their application in high-power and high-current electronic devices is limited, and their excellent performance is not fully utilized To address these limitations, the improved electronic transport properties of SiC nanowires have been achieved via surface modification [24,25,26] and by controlling doping concentrations and doping element [27,28,29]. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and excellent electron emission characteristics can be achieved in the pulse-voltage driving mode, including lower turn-on voltage and higher maximum current. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires
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