Abstract
AbstractThe theory of free‐carrier Faraday effect in semiconductors previously developed by Donovan and Webster for lattice and impurity scattering is extended to the case of n‐type CdS, taking into account piezoelectric and deformation potential scattering. The high frequency magnetoconductivity tensors are derived considering the detailed structure of the conduction band of CdS. The Faraday rotation measurements in n‐type CdS along the c‐axis are performed at liquid nitrogen temperature and room temperature at 24 GHz. The experimental results are found to agree well with the theory, for β = p/a = 1.9, where a and p being the deformation potential and piezoelectric scattering coefficients at T = 90 °K, respectively.
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