Abstract
The piezoelectric polarization effect is dominant at the every GaN/InGaN interface in the MQW structure. In this paper we show that, how this piezoelectric polarization effect is useful in improving the open circuit voltage of GaN/InGaN MQW solar cell. For this purpose we have design a mathematical model of GaN/InGaN MQW solar cell and calculate the values of open circuit voltage with and without piezoelectric polarization effect. For simplicity of the model we are neglecting the current clouding effect, composition fluctuation and electro migration effect present in the device. Here we also assuming that, all the layers of GaN and InGaN material are terminated by Ga-face. Results indicate that the open circuit voltage of MQW solar cell improves by ~6.28% (at indium fraction in quantum well is 0.2 and quantum well thickness is 1 nm) and by ~16.77% (at indium fraction in quantum well is 0.2 and quantum well thickness is 3 nm) by using piezoelectric polarization effect.
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