Abstract
The main purpose of the work is to improve the magnetic and transport characteristics of 2G HTS tapes by creating an ordered array of artificial pinning centers. Using a picosecond laser exposure, a local modification of the HTS film were performed. The pulse energy varied from 300 to 4000 nJ, the pulse duration was 25 ps. A triangular array of micron size defects with a period of 50 μm was created. The dependences of the critical current and n-value change on the pulse energy were obtained. The parameters of the exposure resulting in an increase of the HTS tape critical current and tune of the I-V characteristic slope were found.
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