Abstract
Radiation-produced flatband voltage shifts in MOS capacitors have been measured as a function of incident photon energy and applied electric fields with UV, x- and gamma-ray sources spanning the energy range 70 eV to 1.25 MeV. Special interest was directed to the energies below 20 keV where the greatest effects on the flatband voltages were expected. At 70 eV the shifts are almost as great as those observed at 1.25 MeV (60Co). For 1.49 keV incident photons the voltage shifts are less than 1/3 those observed for 60Co photons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
