Abstract
In the paper, the effect of different deposition process of silicon oxide passivation film on the performance of crystalline silicon cell and module was studied. It was found that the thermal oxidation passivation film has better passivation effect than ozone oxidation passivation film at room temperature, and the cell and module has good stability and low attenuation. The thermal oxidation passivation effect is related to the film thickness. The thicker the film thickness is, the better the anti-PID (potential induced attenuation) performance is. The results can provide reference for photovoltaic industry.
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