Abstract
In this paper, the authors have made an attempt to study the effect of photo-irradiation on the avalanche noise properties of double-drift region (DDR) mixed tunnelling and avalanche transit time (MITATT) device. A model to analyse the avalanche noise of illuminated DDR MITATT devices under small-signal condition is proposed and simulation is carried out to study the noise properties of the device based on silicon designed to operate at W-band. The results show that avalanche noise measure of the device under two different optical illumination configurations such as Flip Chip (FC) and Top Mount (TM) are 37.1 dB and 40.2 dB, respectively, for the incident photon flux density of 1026 m−2 sec−1 at 1000 nm wavelength while the noise measure of the same device under dark condition is 35 dB. Thus, the increase of avalanche noise due to the incident photon flux on optically illuminated device can be reduced if FC configuration is taken instead of TM configuration.
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