Abstract
Adding PH3 during chemical vapor deposition of Ge on Si(001) partially suppresses island formation and changes the shape of the islands that do form. A shape not previously seen in undoped layers grown by chemical vapor deposition is a large pyramid, with base edges aligned along the 〈110〉 directions and sides bounded by {111} planes near the base and {113} planes near the top. This suggests that phosphorus changes the thermodynamics of island formation. During annealing in H2, the shape of the large pyramids changes toward a multifaceted structure. The presence of PH3 during annealing of undoped islands retards coarsening, probably by decreasing surface diffusion.
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