Abstract
The n-type Ge layers with various phosphorus doping concentrations were grown on p-type Si (100) wafers by using Rapid Thermal Chemical Vapor Deposition (RTCVD). The root-mean-square (RMS) surface roughness of the n-type Ge layer increased from 0.167 to 14.131 nm when the phosphorus doping concentration was increased from 3 × 1016 to 3 × 1019 cm−3. High-Resolution X-ray Diffraction was used to evaluate the in-plane lattice constants and the tensile strain of the n-type Ge layer as functions of the phosphorus doping concentration. The presence of tensile strain was further confirmed from the Raman measurements, which revealed a strain reduction from 0.071 to 0.065% when the phosphorus doping concentration was increased from 3 × 1016 to 3 × 1019 cm−3. Moreover, a considerable increase in the photocurrent peak energy was observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
