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Abstract
The effect of PH3on the dissociative chemisorption of SiH4 and Si2H6 on the Si(100) surface has been investigated with supersonic molecular beam techniques. Adsorbed phosphorus atoms, formed as a result of the reaction of PH3on the Si surface, inhibit the dissociative chemisorption of both SiH4 and Si2H6 through a short-range steric mechanism. The probability of dissociative adsorption of both silicon hydrides is found to be proportional to the quantity 1-θP2, where θP is the fractional coverage of adsorbed phosphorous atoms. These results have been employed to formulate a predictive model for the kinetics of Si thin-film growth in the presence of PH3(g).
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