Abstract
To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.
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