Abstract
A SLs quaternary nitride alloy-based UV-C LED with a uniquely designed electron blocking region is proposed in this article. At 200 A/cm2 current density, the proposed design has maximum IQE, ∼121% better than the reference design. Additionally, less than 1% efficiency droop is observed in the proposed design. Due to strain compensation offered by the periodically varying and chirped SLs AlaInbGa(1-a-b)N/ AlcIndGa(1-c-d)N/ AleInfGa(1-e-f)N/ AlgInhGa(1-g-h)N/ AliInjGa(1-i-j)N/ Al0.70Ga0.30N electron blocking region, there is no abrupt potential barrier present, which makes it possible for hole injection in the active region to increase and hence improve the LED performance. The substantial improvement in the IQE is attributable to the proposed structure's enhancement in the carrier wave function overlap by 30%.
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