Abstract
A modified regime of growing InAs/GaAs quantum dots (QDs) by metalorganic vapor phase epitaxy (MOVPE) at atmospheric pressure is described. In contrast to the standard growth regime, the time of periodic interruption of the supply of trimethylindium and arsin to the reactor was increased and varied from 4 to 18 s. It is shown that optimization of the interruption time leads to the formation of dense, homogeneous (with respect to dimensions) QD arrays and to a decrease in the concentration of coarse relaxed clusters without using additional treatments (e.g., doping with surfactants, chemical etching). In particular, the surface concentration of QDs increases up to 6 × 1010 cm−2, that is, by almost an order of magnitude as compared to the standard growth regime. QD structures grown using the modified MOVPE method are characterized by high thermal stability and ensure high intensity of room-temperature electroluminescence of the related edge-emitting Schottky diodes.
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