Abstract

In the last decade, new magnetron sputtering deposition techniques have been developed to produce highly ionized fluxes of sputtered material and, consequently, allow greater control over the energy and direction of the sputtered species. One of such techniques is deep oscillations magnetron sputtering (DOMS). The main objective of the paper is to understand if the new deposition mechanisms that the DOMS technology brings about, in comparison to DCMS, is always an advantage for the film deposition. For this purpose, four well-known deposition systems (Cr, Ta, CrN and TiSiN) were investigated. In each case, thin films were deposited by DOMS and DCMS in order to compare their microstructural, structural and mechanical properties. Taken as examples, the four study systems are understood that, in some cases, it is possible to achieve film properties never achieved through DCMS. However, in other cases, due to their particular characteristics (high voltages), the HiPIMS advantages are diminished when compared to DCMS. Possible solutions to overcome the observed problems are proposed.

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