Abstract
The effect of Pd addition to a Ni layer on the metal-induced lateral crystallization (MILC) and the performance of poly-Si thin-film transisters (TFTs) were studied. By adding 5 atom % Pd, the growth rate of Ni-ILC was faster two times than that of pure Ni-ILC without the degradation of TFTs. The minimum leakage current of TFTs was reduced from 7.5 X 10 - 1 0 to 3.6 X 10 - 1 0 A at V d - 10 V. But further addition of Pd worsened the properties of TFTs. These results were in accord with the microstructural variation of MILC poly-Si as the concentration of Pd.
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