Abstract
Abstract The present paper reports the effect of Pb impurity (low ∼2 at% and high ∼10 at%) on the ac conductivity ( σ ac ) of a-Ge 20 Se 80 glass. Frequency-dependent ac conductance and capacitance of the samples over a frequency range ∼100 Hz to 50 kHz have been taken in the temperature range ∼268 to 358 K. At frequency 2 kHz and temperature 298 K, the value of σ ac increases at low as well as at higher concentration of Pb. σ ac is proportional to ω s for undoped and doped samples. The value of frequency exponent ( s ) decreases as the temperature increases. The static permittivity ( e s ) increases at both Pb concentrations. These results have been explained on the basis of some structural changes at low and higher concentration of Pb impurity.
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