Abstract
The effect of Pauli principle on drift velocity is studied numerically for n-type tetrahedral semiconductors (GaAs, InP, CdTe, InAs and InSb). The method used is the standard quasiclassical Monte Carlo simulation. The electron concentrations range from 1015 cm−3 to 1019 cm−3. The Pauli principle effects become important above 1017 cm−3.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
