Abstract
When post-etch cleaning was carried out in Cu dual-damascene process, Cu at the bottom of isolated via was etched out especially in the wafer edge, and this would become a critical issue as device scale is shrunk. The corrosion was caused in the rinse step rather than chemical cleaning step because dissolved oxygen in rinse water from the air increased oxidation–reduction potential (ORP) and CO2 included in the rinse water for preventing wafer electrification decreased pH. The corrosion was found to be suppressed by increasing dummy pattern density and by controlling atmosphere and pH of the rinse water.
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