Abstract
The effect of shallow and deep etched interface patterns on the effective adhesion of silicon-silicon direct bonds is examined. Specifically, fracture loads of double cantilever beam specimens with structured interfaces, with dimensions in micrometer regime, are measured. The results show that the interface fracture load increases as the structures, which are simple pillars, become taller and narrower. These experimental results are in good agreement with finite element modeling results. The fracture surfaces were inspected after testing, and the surfaces generally had very little debris from the bonded pillars. The results of this study may help to aid in the design of temporary bonding processes that use patterned interfaces to tune the failure behavior.
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