Abstract
A computational model for UV pulsed-laser scribing of silicon target is presented and compared with experimental results. The experiments were performed with a high-power Q-switched diode-pumped solid state laser which was operated at 355 nm. They were conducted on n-type 500 μm thick silicon wafers. The scribing width and depth were measured using scanning electron microscopy. The model takes into account major physics, such as heat transfer, evaporation, multiple reflections, and Rayleigh scattering. It also considers the attenuation and redistribution of laser energy due to Rayleigh scattering. Especially, the influence of the average particle sizes in the model is mainly investigated. Finally, it is shown that the computational model describing the laser scribing of silicon is valid at an average particle size of about 10 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
